Integrated radio frequency circuits

Details Integrated radio frequency circuits Integrated radio frequency circuits

2006-04-04

2006-04-04

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C257S531000, C257S548000

Reexamination Certificate

active

07022566

ABSTRACT:
An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication is processes.

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