Integrated passive device substrates

Details Integrated passive device substrates Integrated passive device substrates

2011-05-03

2011-05-03

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000

Reexamination Certificate

active

07936043

ABSTRACT:
The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

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patent: 6777774 (2004-08-01), Beng et al.
patent: 2003/0067052 (2003-04-01), Matsuo et al.
patent: 2004/0087099 (2004-05-01), Contopanagos et al.
patent: 2005/0017346 (2005-01-01), Yamagata

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