Semiconductor device, design method and structure

Details Semiconductor device, design method and structure Semiconductor device, design method and structure

2011-06-21

2011-06-21

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000

Reexamination Certificate

active

07964920

ABSTRACT:
A semiconductor device can include at least a first diffusion region formed by doping a semiconductor substrate and at least a second diffusion region formed by doping the semiconductor substrate that is separated from the first diffusion region by an isolation region. At least a first conductive line can comprise a semiconductor material formed over and in contact with the first diffusion region and the second diffusion region. A portion of the first conductive line in contact with the first diffusion region is doped to an opposite conductivity type as the first diffusion region. At least a second conductive line comprising a semiconductor material is formed in parallel with the first conductive line and over and in contact with the first diffusion region and the second diffusion region. A portion of the second conductive line can be in contact with the first diffusion region and doped to a same conductivity type as the first diffusion region. A portion of the second conductive line in contact with the second diffusion region can be doped to a same conductivity type as the second diffusion region.

REFERENCES:
patent: 7598133 (2009-10-01), Moniwa et al.
patent: 2007/0096144 (2007-05-01), Kapoor
patent: 2007/0262793 (2007-11-01), Kapoor
patent: 2008/0099873 (2008-05-01), Vora
U.S. Appl. No. 11/590,265, Vora, Madhukar.

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