Integrated optical devices

Details Integrated optical devices Integrated optical devices

1998-10-20

2000-12-05

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

310344, G03C 500, H01L 4104

Patent

active

061564834

ABSTRACT:
In a method of manufacturing an integrated optical device using a wafer of lithium niobate, an optical waveguide is formed in the wafer by diffusing from a surface thereof a metal such as titanium, nickel or zinc and which changes the refractive index of the lithium niobate. A chemical vapor deposition process is used to deposit on the wafer surface a silicon dioxide buffer layer, the process being operated with the temperature of the wafer substantially in the region of about 170.degree. C. to 225.degree. C. A metallic electrode array is deposited on the silicon dioxide buffer layer, and then the wafer is mounted in a package, with suitable optic and electric connections being made thereto. The package is hermetically sealed to protect the connected wafer from the environment.

REFERENCES:
patent: 4119363 (1978-10-01), Camlibel
patent: 5068865 (1991-11-01), Ohshima et al.
patent: 5925973 (1999-07-01), Eda et al.

Affiliated with

Also associated with

Rating

Integrated optical devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated optical devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated optical devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-960018