Multibit-per-cell non-volatile memory with error detection and c

Details Multibit-per-cell non-volatile memory with error detection and c Multibit-per-cell non-volatile memory with error detection and c

1997-09-08

1999-06-01

Canney, Vincent P.

Excavating

G06F 1100

Patent

active

059094494

ABSTRACT:
A multilevel non-volatile memory divides the suitable threshold voltages of memory cells into ranges corresponding to allowed states for storage of data and ranges corresponding to forbidden zones indicating a data error. A read process in accordance automatically checks whether a threshold voltage is in a forbidden zone. In alternative embodiment, a refresh process includes reprogramming the threshold voltage into an allowed state or in the case of a flash memory, reading a sector of the memory, saving data from the sector in a buffer, erasing the sector, and rewriting the data from the buffer back in the sector. Refresh process for the non-volatile memory can be perform in response to detecting a threshold voltage in a forbidden zone, as part of a power-up procedure for the memory, or periodically with a period on the order of days, weeks, or months.

REFERENCES:
patent: 4964079 (1990-10-01), Devin
patent: 5689465 (1997-11-01), Sukegawa et al.
patent: 5751639 (1998-05-01), Ohsawa

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