Integrated nitrogen-treated titanium layer to prevent interactio

Details Integrated nitrogen-treated titanium layer to prevent interactio Integrated nitrogen-treated titanium layer to prevent interactio

1997-04-11

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438688, 438652, 438644, 438642, 438629, 427455, 427456, 427 96, 427 99, H01L 2144

Patent

active

060806656

ABSTRACT:
The present invention generally provides a method for processing a substrate having exposed surfaces of titanium and/or silicon prior to deposition of aluminum. The substrate is positioned adjacent a process zone which provides a nitrogen plasma so that exposed areas of titanium and silicon on the substrate are stuffed with nitrogen to form titanium nitride (TiN) and various compounds of silicon and nitrogen (Si.sub.x N.sub.y), respectively. The nitrogen treated surfaces, i.e, TiN and silicon
itrogen compounds, are resistant to interaction with aluminum. In this manner, the formation of electrically insulating TiAl.sub.3 and/or the spiking of silicon is reduced or eliminated.

REFERENCES:
patent: 4715937 (1987-12-01), Moslehi et al.
patent: 4762728 (1988-08-01), Keyser et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4786360 (1988-11-01), Cote et al.
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5229318 (1993-07-01), Straboni et al.
patent: 5236868 (1993-08-01), Nulman
patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5478780 (1995-12-01), Koerner et al.
patent: 5593511 (1997-01-01), Foster et al.
patent: 5607776 (1997-03-01), Mueller et al.
Wolf, Silicon Processing for the VLSI Era:vol. 2--Process Integration, Lattice Press, pp. 128 & 195, 1990.
Shigeru Murakami, Hiroyuki Nakamura and Osamu Kudoh, NEC Corporation, "Plasma-Nitridated Ti Contact System for VLSI Interconnections" Jun. 15-16, 1987, pp. 148-154.
Partial European Search Report for EP 98 30 2795 mailed to Applied Materials, Inc., Sep. 10, 1998.

Affiliated with

Also associated with

Rating

Integrated nitrogen-treated titanium layer to prevent interactio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated nitrogen-treated titanium layer to prevent interactio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated nitrogen-treated titanium layer to prevent interactio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1784474