Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S006000, C257S256000, C257SE27014, C257SE21615, C438S172000, C438S478000, C438S169000, C438S483000
Reexamination Certificate
active
07898047
ABSTRACT:
Monolithic electronic device including a common nitride epitaxial layer are provided. A first type of nitride device is provided on the common nitride epitaxial layer including a first at least one implanted n-type region on the common nitride epitaxial layer. The first at least one implanted n-type region has a first doping concentration greater than a doping concentration of the common nitride epitaxial layer. A second type of nitride device, different from the first, including a second at least one implanted n-type region is provided on the common nitride epitaxial layer. The second at least one implanted n-type region is different from the first at least one implanted n-type region and has a second doping concentration that is greater than the doping concentration of the common nitride epitaxial layer. First and second pluralities of contacts respectively define first and second electronic devices on the common nitride epitaxial layer.
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Communication pursuant to Artic
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Smith Bradley K
Valentine Jami M
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