Integrated memory and method of repairing an integrated memory

Details Integrated memory and method of repairing an integrated memory Integrated memory and method of repairing an integrated memory

2006-06-06

2006-06-06

Bonzo, Bryce P. (Department: 2113)

Error detection/correction and fault detection/recovery

Data processing system error or fault handling

Reliability and availability

C714S006130, C714S006130, C714S710000, C714S718000, C365S200000, C365S201000

Reexamination Certificate

active

07058851

ABSTRACT:
A method for repairing an integrated memory having first units of memory cells and second, redundant units of memory cells for replacing first units of memory cells. The first units of memory cells are tested with regard to their functionality. In the case of a defect ascertained in one of the first units, a number of redundant units is programmed as an associated cluster for replacing one or more of the first units. In this way, a repair element is formed with a cluster size corresponding to the number of redundant units. The cluster size of respective repair elements is set in a variable manner by a redundancy circuit. As a result, in a test and repair operation, a comparatively short test time of the memory is made possible in conjunction with a yield that remains good.

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