Integrated memory and method for operating it

Details Integrated memory and method for operating it Integrated memory and method for operating it

2005-07-12

2005-07-12

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Precharge

C365S205000, C365S207000

Reexamination Certificate

active

06917549

ABSTRACT:
An integrated memory has a memory cell array having word lines and bit lines. The bit lines are organized in bit line pairs. The bit lines of the bit line pairs cross one another at a crossing location and run parallel to one another. A sense amplifier is connected to one of the bit line pairs at one end. Two precharge circuits are provided. One precharge circuit is arranged on a side of the crossing location and the other precharge circuit is arranged on a side of the crossing location. The precharge circuit facing the sense amplifier is arranged at a first distance from the crossing location and at a second distance from the sense amplifier. The RC constant of the bit lines, which is effective during the precharge operation, is reduced, so that the time period required for a precharge operation is reduced.

REFERENCES:
patent: 5488583 (1996-01-01), Ong et al.
patent: 6181618 (2001-01-01), Inaba et al.
patent: 6292416 (2001-09-01), Reddy et al.
patent: 6337824 (2002-01-01), Kono et al.
patent: 6445638 (2002-09-01), Hsu et al.
patent: 6473348 (2002-10-01), Sim
patent: 6498758 (2002-12-01), Pomar et al.
patent: 6859406 (2005-02-01), Proll et al.
patent: 2004/0156254 (2004-08-01), Proell et al.
patent: 2004/0184337 (2004-09-01), Jakobs
patent: 2004/0233737 (2004-11-01), Benzinger et al.

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