Integrated low-k hard mask

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S622000, C438S624000, C438S700000

Reexamination Certificate

active

06974772

ABSTRACT:
Embodiments of the invention provide a device with a hard mask layer between first and second ILD layers. The hard mask layer may have a k value approximately equal to the first and/or second ILD layers.

REFERENCES:
patent: 2003/0113995 (2003-06-01), Xia et al.
patent: 2003/0134495 (2003-07-01), Gates et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated low-k hard mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated low-k hard mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated low-k hard mask will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3497307

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.