Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-17
2008-08-19
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S257000, C438S258000, C438S261000, C438S275000, C257SE21008
Reexamination Certificate
active
07413947
ABSTRACT:
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143,or148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130) and a top-level dielectric layer (199) located at least partially along a sidewall of the second capacitor plate (160).
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patent: 5187637 (1993-02-01), Embree
patent: 5702988 (1997-12-01), Liang
patent: 5751067 (1998-05-01), Mikagi
U.S. Appl. No. 11/249,535, filed Oct. 13, 2005; entitled “Integrated High Voltage Capacitor and a Method of Manufacture Therefor”; to David Larkin, et al.
U.S. Appl. No. 11/250,047, filed Oct. 13, 2005; entitled “Integrated High Voltage Capacitor Having Capacitance Uniformity Structures and A Method of Manufacture Therefor” to David Larkin, et al.
Gokhale Ashish V.
Larkin David L.
Mai Quang Xuan
Saraiya Dhaval A.
Brady III Wade J.
Lee Kyoung
Lindsay Jr. Walter L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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