Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-04
2006-07-04
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S237000, C438S328000, C438S570000
Reexamination Certificate
active
07071062
ABSTRACT:
An integrated device comprising a MOS transistor and a Schottky diode which are formed on a semiconductor substrate of a first conductivity type is shown. The device comprises a plurality of body region stripes of a second conductivity type which are adjacent and parallel to each other, a first metal layer placed over said substrate and a second metal layer placed under said substrate. The device comprises a plurality of elementary structures parallel to each other each one of which comprises first zones provided with a silicon oxide layer placed over a portion of the substrate which is comprised between two adjacent body region stripes, a polysilicon layer superimposed to the silicon oxide layer, a dielectric layer placed over and around the polysilicon layer. Some body region stripes comprise source regions of the first conductivity type which are placed adjacent to the first zones of the elementary structures to form elementary cells of said MOS transistor. The elementary structures and the body regions stripes extend longitudinally in a transversal way to the formation of the channel in the elementary cells of the MOS transistor and the first metal layer contacts the source regions. At least one elementary structure comprises at least a second zone adapted to allow the direct contact between the first metal layer and the underlying substrate portion arranged between two adjacent body regions stripes to perform the Schottky diode.
REFERENCES:
patent: 5886383 (1999-03-01), Kinzer
patent: 5956578 (1999-09-01), Weitzel et al.
patent: 6049108 (2000-04-01), Williams et al.
Frisina Ferruccio
Saggio Mario
Au Bac H.
Hogan & Hartson L.L.P.
Smith Zandra V.
STMicroelectronics S.R.L.
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