Integrated deposition process for copper metallization

Details Integrated deposition process for copper metallization Integrated deposition process for copper metallization

2005-04-19

2005-04-19

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S643000, C438S653000, C438S680000

Reexamination Certificate

active

06881673

ABSTRACT:
A method and apparatus for metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.

REFERENCES:
patent: 4364099 (1982-12-01), Koyama et al.
patent: 4649625 (1987-03-01), Lu
patent: 4753851 (1988-06-01), Roberts et al.
patent: 4760369 (1988-07-01), Tiku
patent: 5049251 (1991-09-01), Inoue
patent: 5108569 (1992-04-01), Gilboa et al.
patent: 5112448 (1992-05-01), Chakravorty
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5225363 (1993-07-01), Riemenschneider et al.
patent: 5316974 (1994-05-01), Crank
patent: 5352623 (1994-10-01), Kamiyama
patent: 5354712 (1994-10-01), Ho et al.
patent: 5439574 (1995-08-01), Kobayashi et al.
patent: 5487923 (1996-01-01), Min et al.
patent: 5508221 (1996-04-01), Kamiyama
patent: 5563090 (1996-10-01), Lee et al.
patent: 5614437 (1997-03-01), Choudhury
patent: 5633200 (1997-05-01), Hu
patent: 5654233 (1997-08-01), Yu
patent: 5717628 (1998-02-01), Hammerl et al.
patent: 5747360 (1998-05-01), Nulman
patent: 5792522 (1998-08-01), Jin et al.
patent: 5801098 (1998-09-01), Fiordalice et al.
patent: 5897375 (1999-04-01), Watts et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5933758 (1999-08-01), Jain
patent: 5962923 (1999-10-01), Xu et al.
patent: 5985103 (1999-11-01), Givens et al.
patent: 6001727 (1999-12-01), Ohmi et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6130161 (2000-10-01), Ashley et al.
patent: 6140228 (2000-10-01), Shan et al.
patent: 6174711 (2001-01-01), Tanaka et al.
patent: 6174811 (2001-01-01), Ding et al.
patent: 6313033 (2001-11-01), Chiang et al.
patent: 20030013297 (2003-01-01), Chen et al.
patent: 20030017695 (2003-01-01), Chen et al.
patent: WO 9852219 (1998-11-01), None

Affiliated with

Also associated with

Rating

Integrated deposition process for copper metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated deposition process for copper metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated deposition process for copper metallization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3417787