Integrated circuits with tub-ties

Details Integrated circuits with tub-ties Integrated circuits with tub-ties

1998-05-28

1999-09-07

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257204, 257206, 257338, 257351, 257357, 257376, 257371, 257213, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059491124

ABSTRACT:
An IC comprises a tub of a first conductivity type, at least one transistor embedded in the tub, and a first pair of isolating regions defining therebetween a tub-tie region coupled to the tub. The tub-tie region comprises a cap portion of the first conductivity type and an underlying buried pedestal portion of a second conductivity type. At least a top section of the pedestal portion is surrounded by the cap portion so that a conducting path is formed between the cap portion and the tub. In a CMOS IC tub-ties of this design are provided for both NMOS and PMOS transistors. In a preferred embodiment, the cap portion of each tub-tie comprises a relatively heavily doped central section and more lightly doped peripheral sections, both of the same conductivity type. In accordance with another aspect of our invention, a reduced-mask-count CMOS IC process includes forming the isolating regions so that each has a protrusion which extends over the surface regions where the peripheral sections of the cap portion are to be formed. Then, a combination of ion implantation energies and concentrations, as well as suitable PR masking, in conjunction with the shape of the isolating regions, enables selective doping of the pedestal portion.

REFERENCES:
patent: 4905073 (1990-02-01), Chen et al.
patent: 5571745 (1996-11-01), Horiuchi
U. Schwalke et al., EXTIGATE . . . , 27.sup.th European Solid-State Research Conference, Stuttgart, Germany, Sep. 22-24, 1996, pp. 317-320.
U. Schwalke et al., Advanced Gate-Stack . . . , 1997 Symposium on VLSI Technology, Jun. 10-12, 1997, Digest of Technical Papers, pp. 71-72.
C. P. Chang et al., A Highly Manufacturable . . . , 1997 IEDM, Dec. 7-19, 1997, Technical Digest., pp. 661-665 (1997).

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