Integrated circuits with reduced leakage current

Details Integrated circuits with reduced leakage current Integrated circuits with reduced leakage current

2007-09-18

2007-09-18

Tran, Anh Q. (Department: 2819)

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Signal level or switching threshold stabilization

C326S034000, C326S112000, C326S119000

Reexamination Certificate

active

11301236

ABSTRACT:
In one embodiment, NMOS transistors have their source coupled to a common source node such that the NMOS transistors conduct a leakage current if the common source node is grounded. To reduce this leakage current, the common source node is raised in potential. Similarly, PMOS transistors have their source coupled to a common source node such that the PMOS transistors conduct a leakage current if the common source node is charged to a power supply voltage VDD. To reduce this leakage current, the common source node is lowered in potential.

REFERENCES:
patent: 6977519 (2005-12-01), Bhavnagarwala et al.
patent: 7126370 (2006-10-01), Bhattacharya

Affiliated with

Also associated with

Rating

Integrated circuits with reduced leakage current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuits with reduced leakage current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuits with reduced leakage current will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3776780