Integrated circuits with composite gate dielectric

Details Integrated circuits with composite gate dielectric Integrated circuits with composite gate dielectric

2005-04-28

2008-09-09

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S325000, C257S326000, C257S410000, C257S411000

Reexamination Certificate

active

07423326

ABSTRACT:
CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.

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