Integrated circuits including spacers that extend beneath a...

Details Integrated circuits including spacers that extend beneath a... Integrated circuits including spacers that extend beneath a...

2005-06-30

2008-08-12

Nguyen, Dao H. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S369000, C257SE21507, C257SE21578, C438S254000, C438S618000

Reexamination Certificate

active

07411240

ABSTRACT:
Integrated circuit devices are fabricated by fabricating a conductive line on an insulating layer on an integrated circuit substrate. The conductive line includes a bottom adjacent the insulating layer, a top remote from the insulating layer and first and second sidewalls therebetween. An insulating spacer is formed to extend along the first and second sidewalls and to also extend along at least a portion of the bottom between the conductive line and the insulating layer. By providing an insulating spacer beneath at least a portion of the conductive line, insulation reliability may be improved even as the spacer may become narrower and/or the contact area may be enlarged.

REFERENCES:
patent: 6353249 (2002-03-01), Boyd et al.
patent: 6403996 (2002-06-01), Lee
patent: 6511879 (2003-01-01), Drynan
patent: 6642581 (2003-11-01), Matsuda et al.
patent: 6930341 (2005-08-01), Park et al.

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