Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-12-11
2000-11-14
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438152, 438153, 438241, 257903, 257904, 257953, H01L 218234
Patent
active
06146936&
ABSTRACT:
The present invention pertains to methods of forming integrated circuitry, methods of forming SRAM cells, and methods of reducing alpha particle inflicted damage to SRAM cells. Additionally, the present invention pertains to integrated circuitry. In one aspect, the invention includes a method comprising: a) forming at least one second conductivity type diffusion region beneath at least one of an SRAM cell pull-down device drain of a first conductivity type and an SRAM cell access device source of the first conductivity type; and b) not forming a second conductivity type diffusion region beneath at least one of a source of the SRAM cell pull-down device and a drain of the SRAM cell access device. In another aspect, the invention includes a method comprising: a) providing a semiconductor substrate; b) defining an SRAM cell pull-down device region of the semiconductor substrate, the pull-down device region comprising a pull-down device source region and a pull-down device drain region; c) defining an SRAM access device source region and an access device drain region; d) defining a field oxide isolation region of the semiconductor substrate; and e) in a common implant, implanting a conductivity-enhancing dopant of a first conductivity type beneath the field oxide region, beneath the access device source region, and beneath the pull-down device drain region; the common implant not implanting the conductivity-enhancing dopant of the first conductivity type beneath at least one of the access device drain region and the pull-down device source region.
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Gurley Lynne A.
Micro)n Technology, Inc.
Niebling John F.
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