Integrated circuitry and method of forming a field effect transi

Details Integrated circuitry and method of forming a field effect transi Integrated circuitry and method of forming a field effect transi

1998-03-05

1999-10-05

Trihn, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438299, 438653, H01L 21336

Patent

active

059638133

ABSTRACT:
A method of forming a field effect transistor includes, a) providing a silicon substrate having impurity doping of a first conductivity type; b) providing source and drain diffusion regions of a second conductivity type within the silicon substrate, the source region and the drain region being spaced from one another to define a channel region therebetween within the silicon substrate; c) providing a gate relative to the silicon substrate operatively adjacent the channel region; and d) providing respective ohmic electrical contacts to the source region and the drain region, the electrical contact to the source region comprising a substrate leaking junction, the electrical connection to the drain region not comprising a substrate leaking junction. A field effect transistor is also disclosed.

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