Integrated circuit with protected implantation profiles and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate

Reexamination Certificate

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C438S217000, C438S282000, C438S786000

Reexamination Certificate

active

07067362

ABSTRACT:
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.

REFERENCES:
patent: 5930627 (1999-07-01), Zhou et al.
patent: 6548861 (2003-04-01), Palm et al.
patent: 6586296 (2003-07-01), Watt
patent: 6713334 (2004-03-01), Nandakumar et al.
patent: 2003/0232472 (2003-12-01), Wu

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