Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Patent
1998-02-10
2000-09-12
De Cady, Albert
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
365201, G11C 2900
Patent
active
06119252&
ABSTRACT:
A memory device is described which includes a latch circuit for latching a normally externally provided signal during a test mode. The input pin which is normally enabled to receive the external signal is re-routed to provide an external reference voltage, Vref, to internal circuitry. During testing operations the external Vref signal is used. Once an integrated circuit is determined to be good, an internal generator circuit is set to provide Vref. The integrated circuit can be a flash memory device, and the input pin can be a BYTE command pin. This method of substituting the source of Vref eliminates time required to set the internal generator circuit in defective memory devices.
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"Flash Memory 2 Meg X 8", Flash Memory Data Book, Micron Quantum Devices, Inc., 2-5:2-33, (1997).
Papaliolios A.
Roohparvar Frankie Fariborz
Cady Albert De
Lin Samuel
Micron Technology
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