Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Leung, Quyen (Department: 2834)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S394000
Reexamination Certificate
active
07867835
ABSTRACT:
An integrated circuit system that includes: providing a substrate including an active device with a gate and a gate dielectric; forming a first liner, a first spacer, a second liner, and a second spacer adjacent the gate; forming a material layer over the integrated circuit system; forming an opening between the material layer and the first spacer by removing a portion of the material layer, the second spacer, and the second liner to expose the substrate; and forming a source/drain extension and a halo region through the opening.
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Gao Wenzhi
Lee Jae Gon
Quek Elgin Kiok Boone
Teh Young Way
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
Kenerly Terrance
Leung Quyen
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