Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S503000, C257S506000
Reexamination Certificate
active
07015549
ABSTRACT:
An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer.
REFERENCES:
patent: 4982263 (1991-01-01), Spratt et al.
patent: 5656845 (1997-08-01), Akbar
patent: 5963817 (1999-10-01), Chu et al.
patent: 6121659 (2000-09-01), Christensen et al.
patent: 6174754 (2001-01-01), Lee et al.
patent: 6429477 (2002-08-01), Mandelman et al.
patent: 6670675 (2003-12-01), Ho et al.
patent: 6835981 (2004-12-01), Yamada et al.
patent: 2002/0047158 (2002-04-01), Park et al.
patent: 2002/0093041 (2002-07-01), Hong
patent: 2002/0160574 (2002-10-01), Zahurak
patent: 2003/0111681 (2003-06-01), Kawanaka
patent: 2003/0213995 (2003-11-01), Duvvury
Choe Jeong-dong
Kim Seong-ho
Kim Sung-min
Lee Chang-sub
Lee Shin-ae
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
Smoot Stephen W.
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