Integrated circuit structure with improved LDMOS design

Details Integrated circuit structure with improved LDMOS design Integrated circuit structure with improved LDMOS design

2007-02-16

2009-10-27

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000, C438S305000, C438S306000, C438S595000, C257SE21427

Reexamination Certificate

active

07608512

ABSTRACT:
A semiconductor integrated circuit including an LDMOS device structure comprises a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region.

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