Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-27
1999-06-15
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257516, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059124920
ABSTRACT:
A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) exhibiting enhanced immunity to Hot Carrier Effects (HCEs), and a method by which the MOSFET may be formed. To form the MOSFET there is first provided a semiconductor substrate having a gate dielectric layer formed thereupon. The gate dielectric layer has a gate electrode formed thereupon, where the gate dielectric layer extends beyond a pair of opposite edges of the gate electrode. Formed into the semiconductor substrate adjoining the pair of opposite edges of the gate electrode is a pair of low dose ion implants. Formed upon the gate dielectric layer and contacting the pair of opposite edges of the gate electrode is a pair of conductive spacers. The pair of conductive spacers partially overlaps the pair of low dose ion implants. Finally, there is formed into the semiconductor substrate adjoining the pair of opposite edges of the gate electrode and further removed from the pair of conductive spacers a pair of source/drain electrodes. The pair of source/drain electrodes partially overlaps the pair of low dose ion implants. Optionally, a pair of insulator spacers may be formed upon the pair of conductive spacers to adjust the partial overlap of the pair of source/drain electrodes and the pair of low dose ion implants.
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Silicon Processing--For the VLSI Era--vol. II, p. 186, 1990.
Chang Ming-Hsung
Wang J. W.
Ackerman Stephen B.
Cao Phat X.
Chaudhuri Olik
Saile George O.
Szecsy Alek P.
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