Method of manufacturing silicon substrate

Details Method of manufacturing silicon substrate Method of manufacturing silicon substrate

1991-10-28

1995-09-12

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427309, 4273977, C23C 1624, B05D 302

Patent

active

054495326

ABSTRACT:
A method of manufacturing a silicon single crystal substrate with the back surface thereof having deposited polycrystalline silicon. The method includes steps of depositing polycrystalline silicon on a coarsely polished silicon single crystal substrate, mirror surface finish polishing one substrate surface and carrying out a high temperature thermal treatment. The thermal treatment is carried out either prior or subsequent to the polycrystalline silicon deposition step. The thermal treatment has the effects of causing diffusion of interstitial oxygen Oi from the substrate surface to the outside and also causing contraction and vanishing of Oi precipitation nuclei in the substrate.

REFERENCES:
patent: 4461670 (1984-07-01), Celler et al.
patent: 4501060 (1985-02-01), Frye et al.
patent: 4590130 (1986-05-01), Cline et al.

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