Integrated circuit structure and method therefore

Details Integrated circuit structure and method therefore Integrated circuit structure and method therefore

2001-04-23

2003-09-09

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S290000, C438S981000

Reexamination Certificate

active

06617214

ABSTRACT:

FIELD OF THE INVENTION
This invention relates, generally, to semiconductor processing and devices and, more specifically, to system on chip technology.
BACKGROUND OF THE INVENTION
Typically, when forming core devices and I/O devices on the same chip, the two devices are formed in separate wells in order to account for the devices' differences in threshold voltage (V
T
). A core device uses a lower V
T
as compared to the I/O devices. The use of separate wells increases processing complexity by increasing the number or masks used during manufacturing of integrated circuits (ICs).
When an analog device is needed on the chip, a core device is used for this function because the power supply for the analog device is typically the same as that for the core device if low voltage operation is required. Typically, the core device will be modified to increase the gate length of the transistor to account for the stricter requirements of linearity, for example, of the analog device. Since core devices typically have halo implants, the output conductance of such a device is too great for an analog device. At a given gate voltage, the current will continue to increase with increasing drain voltage in the saturation regime due to the halo implants.
Therefore, a need to decrease the processing complexity of integrating core devices and I/O devices on the same chip is needed. In addition, an integration scheme with improved analog devices is also needed.


REFERENCES:
patent: 5618740 (1997-04-01), Huang
patent: 6124616 (2000-09-01), Dennison et al.
patent: 6413824 (2002-07-01), Chatterjee et al.
patent: 2002/0052083 (2002-05-01), Zhang et al.

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