Integrated circuit semiconductor device including stacked...

Details Integrated circuit semiconductor device including stacked... Integrated circuit semiconductor device including stacked...

2011-07-12

2011-07-12

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S302000

Reexamination Certificate

active

07977725

ABSTRACT:
An integrated circuit semiconductor device includes a first transistor formed at a lower substrate and configured with at least one of a vertical transistor and a planar transistor. A bonding insulation layer is formed on the first transistor, and an upper substrate is bonded on the bonding insulation layer. A second transistor configured with at least one of a vertical transistor and a planar transistor is formed at the upper substrate. The first transistor and the second transistor are connected by an interconnection layer.

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patent: 2005/0059214 (2005-03-01), Cheng et al.
patent: 2007/0228434 (2007-10-01), Shimojo
patent: 2008/0283816 (2008-11-01), Takaishi
patent: 05-102430 (1993-04-01), None
patent: 1020020010813 (2002-06-01), None
patent: 1020060104696 (2006-09-01), None

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