Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-02-22
2011-02-22
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S700000, C257SE23010, C257SE23021, C257SE23019, C257SE23020, C257SE23022, C257SE25010, C257SE25011, C257SE25012, C257SE25013
Reexamination Certificate
active
07892963
ABSTRACT:
A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit substrate having a non-active side and an active side; forming a recess in the integrated circuit substrate from the non-active side exposing a first contact and a second contact with the first contact and the second contact along the active side; forming a first via, having a first via extension extended beyond the non-active side and an opening at the non-active side, within the recess; forming a barrier liner within the opening with the barrier liner exposed beyond the non-active side; and forming a second via over the barrier liner and within the opening of the first via with the second via exposed beyond the non-active side.
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Chan Kai Chong
Yeo Alfred
Globalfoundries Singapore Pte. Ltd.
Ishimaru Mikio
Kusumakar Karen M
Lebentritt Michael S
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