Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-01-24
2006-01-24
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S778000, C257S779000
Reexamination Certificate
active
06989586
ABSTRACT:
Mechanical stresses are reduced between an electronic component having relatively low fracture toughness and a substrate having relatively greater fracture toughness. In an embodiment, the component may be a die having mounting contacts formed of a low yield strength material, such as solder. A package substrate has columnar lands formed of a relatively higher yield strength material, such as copper, having a relatively higher melting point than the component contacts and having a relatively high current-carrying capacity. The component contacts may be hemispherical in shape. The lands may be substantially cylinders, truncated cones or pyramids, inverted truncated cones or pyramids, or other columnar shapes. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.
REFERENCES:
patent: 6201707 (2001-03-01), Sota
patent: 6571245 (2003-05-01), Huang et al.
patent: 2003/0034565 (2003-02-01), Lan et al.
patent: 2003/0157747 (2003-08-01), Chen et al.
Harper, Electronic Packaging Interconnection Handbook, 1991, McGraw-Hill, 5.1-5.5.
Wolf et al., Silicon Processing for the VLSI Era, 2000, vol. I, Lattice Press, 719-727, 791-795.
Agraharam Sairam
Atluri Vasudeva
Hanna Carlton
He Dongming
Andujar Leonardo
Intel Corporation
Schwegman, Lunberg, Woessner & Kluth, P.A.
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