Integrated circuit memory devices including memory cells on...

Details Integrated circuit memory devices including memory cells on... Integrated circuit memory devices including memory cells on...

2008-04-23

2010-11-16

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29129, C257SE29300, C257SE21179, C438S257000

Reexamination Certificate

active

07834391

ABSTRACT:
Coupling among adjacent rows of memory cells on an integrated circuit substrate may reduced by forming the adjacent rows of memory cells on adjacent semiconductor pedestals that extend different distances away from the integrated circuit substrate. NAND flash memory devices that include different pedestal heights and fabrication methods for integrated circuit memory devices are also disclosed.

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Search Report under Section 17, GB Application No. GB0812997.5, Oct. 26, 2008.

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