Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-04-12
2005-04-12
Lam, David (Department: 2818)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S190000, C365S203000
Reexamination Certificate
active
06879533
ABSTRACT:
An integrated circuit memory device can include a memory cell array having a plurality of memory cells, and a bit line sense amplifier configured to amplify data on a pair of bit lines from a memory cell of the memory cell array and to provide the amplified data on a data line and a complementary data line. An active load circuit includes a first load device electrically connected between the data line and a voltage source wherein an electrical resistance of the first load device is varied responsive to a voltage level of the data line. The active load circuit also includes a second load device electrically connected between the complementary data line and the voltage source wherein an electrical resistance of the second load device is varied responsive to a voltage level of the complementary data line. Related methods are also discussed.
REFERENCES:
patent: 6452851 (2002-09-01), Endo et al.
Chae Moo-sung
Kim Myeong-o
Seo Sung-min
Lam David
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
LandOfFree
Integrated circuit memory devices including active load... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit memory devices including active load..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices including active load... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3381038