Integrated circuit memory devices having wide and narrow channel

Details Integrated circuit memory devices having wide and narrow channel Integrated circuit memory devices having wide and narrow channel

1996-08-22

1998-11-24

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257398, 257399, 257400, H01L 29788, H01L 2976, H01L 2994

Patent

active

058411631

ABSTRACT:
An integrated circuit memory device includes a semiconductor substrate having a memory cell area and a select transistor area. A first field insulation layer is included in the memory cell area, and a first channel stop impurity layer is included beneath the first field insulation layer. The first channel stop impurity layer is narrower than the first field insulation area. A second field insulation layer is included in the select transistor area, and a second channel stop impurity layer is included beneath the second field insulation layer. The second channel stop impurity layer is wider than the second field insulation layer. Integrated circuit memory devices are fabricated by defining a memory cell area and a select transistor area of a semiconductor substrate. The memory cell area includes a memory cell active area and a memory cell field area. The select transistor area includes a select transistor active area and a select transistor field area. First channel stop impurity ions are implanted into the select transistor field area. A first field insulation layer is formed in the memory cell field area, and a second field insulation layer is formed in the select transistor field area, such that the first channel stop impurity ions lie beneath the second field insulation area. Second channel stop impurity ions are implanted through the central portion of the first field insulation area, such that the second channel stop impurity ions lie beneath the central portion of the first field insulation layer.

REFERENCES:
patent: 5194924 (1993-03-01), Komori et al.
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5545907 (1996-08-01), Maari
patent: 5545911 (1996-08-01), Otsuki et al.
patent: 5556798 (1996-09-01), Hong
patent: 5568418 (1996-10-01), Crisenza et al.
patent: 5656839 (1997-08-01), Komori et al.

Affiliated with

Also associated with

Rating

Integrated circuit memory devices having wide and narrow channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory devices having wide and narrow channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices having wide and narrow channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705932