Integrated circuit memory devices having memory cells...

Details Integrated circuit memory devices having memory cells... Integrated circuit memory devices having memory cells...

2006-05-02

2006-05-02

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S309000

Reexamination Certificate

active

07038261

ABSTRACT:
An integrated circuit memory device includes a semiconductor substrate and a first electrically insulating layer that extends on the semiconductor substrate and has a first contact hole extending therethrough. An electrically conductive plug is provided in the first contact hole. A phase-change material layer pattern is provided as a non-volatile storage medium. The phase-change material layer pattern has a bottom surface that is electrically connected to the electrically conductive plug. A second electrically insulating layer is provided on the phase-change material layer pattern. The second electrically insulating layer has a second contact hole therein. This contact hole exposes a portion of an upper surface of the phase-change material layer pattern. To improve data writing efficiency, the area of the exposed portion of the upper surface of the phase-change material layer pattern is less than a maximum cross-sectional area of the electrically conductive plug. A plate electrode is also provided. This plate electrode is electrically connected to the phase-change material layer pattern. Barrier layers may also be provided directly on the plug and directly on the exposed portion of the upper surface.

REFERENCES:
patent: 5920788 (1999-07-01), Reinberg
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 2001/0034078 (2001-10-01), Zahorik et al.

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