Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-11-23
2008-11-25
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
07457153
ABSTRACT:
An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic insulating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
REFERENCES:
patent: 6576969 (2003-06-01), Tran et al.
patent: 6750491 (2004-06-01), Sharma et al.
patent: 6803274 (2004-10-01), Sharma et al.
patent: 6891212 (2005-05-01), Sharma et al.
patent: 6891746 (2005-05-01), Tran et al.
patent: 6903403 (2005-06-01), Sharma et al.
patent: 6924539 (2005-08-01), Sharma et al.
patent: 6936903 (2005-08-01), Anthony et al.
patent: 6956271 (2005-10-01), Sharma
patent: 6980466 (2005-12-01), Perner et al.
patent: 6989975 (2006-01-01), Nickel et al.
patent: 7027320 (2006-04-01), Sharma
patent: 7167391 (2007-01-01), Sharma et al.
patent: 7195927 (2007-03-01), Sharma et al.
patent: 2004/0184311 (2004-09-01), Sharma
patent: 2005/0169034 (2005-08-01), Perner
patent: 2005/0213375 (2005-09-01), Perner et al.
patent: 2006/0023494 (2006-02-01), Jeong et al.
patent: 2006/0028862 (2006-02-01), Min et al.
patent: 2006/0042938 (2006-03-01), Cheng et al.
patent: 2006/0083054 (2006-04-01), Jeong
patent: 2006/0087880 (2006-04-01), Mancoff et al.
patent: 2006/0098354 (2006-05-01), Parkin
patent: 2006/0239064 (2006-10-01), Liaw
patent: 2007/0097730 (2007-05-01), Chen et al.
patent: 2007/0115718 (2007-05-01), Sharma et al.
U.S. Appl. No. 11/286,245, filed Nov. 23, 2005, Sharma et al.
Sharma Manish
Tran Lung
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Tran Michael T
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