Integrated circuit memory devices having magnetic memory...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000

Reexamination Certificate

active

07457153

ABSTRACT:
An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic insulating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.

REFERENCES:
patent: 6576969 (2003-06-01), Tran et al.
patent: 6750491 (2004-06-01), Sharma et al.
patent: 6803274 (2004-10-01), Sharma et al.
patent: 6891212 (2005-05-01), Sharma et al.
patent: 6891746 (2005-05-01), Tran et al.
patent: 6903403 (2005-06-01), Sharma et al.
patent: 6924539 (2005-08-01), Sharma et al.
patent: 6936903 (2005-08-01), Anthony et al.
patent: 6956271 (2005-10-01), Sharma
patent: 6980466 (2005-12-01), Perner et al.
patent: 6989975 (2006-01-01), Nickel et al.
patent: 7027320 (2006-04-01), Sharma
patent: 7167391 (2007-01-01), Sharma et al.
patent: 7195927 (2007-03-01), Sharma et al.
patent: 2004/0184311 (2004-09-01), Sharma
patent: 2005/0169034 (2005-08-01), Perner
patent: 2005/0213375 (2005-09-01), Perner et al.
patent: 2006/0023494 (2006-02-01), Jeong et al.
patent: 2006/0028862 (2006-02-01), Min et al.
patent: 2006/0042938 (2006-03-01), Cheng et al.
patent: 2006/0083054 (2006-04-01), Jeong
patent: 2006/0087880 (2006-04-01), Mancoff et al.
patent: 2006/0098354 (2006-05-01), Parkin
patent: 2006/0239064 (2006-10-01), Liaw
patent: 2007/0097730 (2007-05-01), Chen et al.
patent: 2007/0115718 (2007-05-01), Sharma et al.
U.S. Appl. No. 11/286,245, filed Nov. 23, 2005, Sharma et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit memory devices having magnetic memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory devices having magnetic memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices having magnetic memory... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4039696

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.