Integrated circuit memory devices having improved precharge and

Details Integrated circuit memory devices having improved precharge and Integrated circuit memory devices having improved precharge and

1999-01-07

2000-02-15

Nguyen, Tan T.

Static information storage and retrieval

Read/write circuit

For complementary information

365203, G11C 700

Patent

active

060260351

ABSTRACT:
Integrated circuit memory devices include a pair of complementary input/output lines (IO and /IO), a pair of complementary data lines (DATA and /DATA) and a driver circuit which is responsive to a driver signal (PDT) and drives the pair of complementary input/output lines with complementary data from the pair of complementary data lines when the driver signal is in an enabled state (e.g., logic 1). A precharge circuit is also provided. This precharge circuit, which is responsive to a precharge control signal (PIOPR) and the driver signal (PDT), precharges the pair of complementary input/output lines IO and /IO during a precharge time interval which precedes the generation of a column select signal (CSL). The precharge time interval commences when the driver signal (PDT) and the precharge control signal (PIOPR) are in disabled and enabled states, respectively, at the same time. The precharge time interval also terminates upon transition of the driver signal (PDT) from its disabled state to an enabled state, even if the precharge control signal remains in its enabled state.

REFERENCES:
patent: 5659512 (1997-08-01), Koyanagi et al.
patent: 5777935 (1998-07-01), Pantelakis et al.
patent: 5875140 (1999-02-01), Merritt et al.

Affiliated with

Also associated with

Rating

Integrated circuit memory devices having improved precharge and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory devices having improved precharge and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices having improved precharge and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1911243