Static information storage and retrieval – Read/write circuit – Simultaneous operations
Patent
1998-06-25
2000-05-16
Nelms, David
Static information storage and retrieval
Read/write circuit
Simultaneous operations
36518905, 365201, G11C 1604
Patent
active
060646012
ABSTRACT:
Integrated circuit memory devices can reduce write time during a write cycle of a parallel bit test mode. The memory devices include a simultaneous column select line activation circuit that simultaneously activates at least two of the plurality of column select lines during a write cycle of a parallel bit test mode. Therefore, during the write cycle, at least two bit lines are simultaneously connected to one input and output line since at least two column select lines are simultaneously activated by the simultaneous column select line activation circuit. Accordingly, data is simultaneously written to the memory cells connected to at least two bit lines through the input and output line.
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patent: 5416741 (1995-05-01), Ohsawa
patent: 5568434 (1996-10-01), Jeon
patent: 5748641 (1998-05-01), Ohsawa
patent: 5809225 (1998-09-01), Ohsawa et al.
Kim Byung-chul
Yoo Jei-Hwan
Auduong Gene N.
Nelms David
Samsung Electronics Co,. Ltd.
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