Integrated circuit memory device

Details Integrated circuit memory device Integrated circuit memory device

1997-02-24

1998-10-06

Dinh, Son T.

Static information storage and retrieval

Read only systems

Semiconductive

365 96, 365175, 3652257, G11C 1706

Patent

active

058187499

ABSTRACT:
A memory array using structure changing memory elements in a reverse biased diode array is disclosed. A memory cell is programmed and read by reverse biasing the diode to overcome the diode's breakdown voltage. The disclosed reversed biased diode array exhibits much less substrate current leakage than a similar forward biased diode array.

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I.S. Osborne et al., The Role of the a-Si:H Layer in Metal / a-Si:H / Metal Memory Structures, Mat. Res. Soc. Symp. Proc. vol. 258--1992 Materials Research Society, pp. 1169-1173.

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