Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-05
2011-07-05
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S222000, C257S506000, C257S510000
Reexamination Certificate
active
07972921
ABSTRACT:
A method of manufacturing a self-aligned inverted T-shaped isolation structure. An integrated circuit isolation system including providing a substrate, forming a base insulator region in the substrate, growing the substrate to surround the base insulator region, and depositing an insulator column having a narrower width than the base insulator region on the base insulator region.
REFERENCES:
patent: 6894354 (2005-05-01), Jono et al.
patent: 6905967 (2005-06-01), Tian et al.
patent: 6914016 (2005-07-01), Tan et al.
patent: 6939780 (2005-09-01), Yun et al.
patent: 6946359 (2005-09-01), Yang et al.
patent: 7045468 (2006-05-01), Liang
patent: 2002/0055216 (2002-05-01), Takeuchi
patent: 2005/0139952 (2005-06-01), Koh
patent: 2007/0099362 (2007-05-01), Chidambarrao et al.
patent: 2007/0246754 (2007-10-01), Sonsky et al.
Chong Yung Fu
Luo Zhijiong
Cao Phat X
Globalfoundries Singapore Pte. Ltd.
International Business Machines - Corporation
Ishimaru Mikio
LandOfFree
Integrated circuit isolation system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit isolation system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit isolation system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2645020