Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-08
2005-11-08
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S763000
Reexamination Certificate
active
06962883
ABSTRACT:
A two-stage plasma enhance dielectric deposition with a first stage of low capacitively-coupled RF bias with conformal deposition (202) followed by high capacitively-coupled RF bias for planarizing deposition (204) limits the charge build up on the underlying structure (104, 106, 108).
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patent: 5707486 (1998-01-01), Collins
patent: 5888414 (1999-03-01), Collins et al.
Dixit Girish A.
Krishnan Srikanth
Nag Somnath S.
Brady III W. James
Hoel Carlton H.
Picardat Kevin M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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