Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S234000
Reexamination Certificate
active
06902970
ABSTRACT:
Production of an insulated-gate field-effect transistor is begun and interrupted at an uncompleted point. Then, a bipolar transistor is almost completely produced. At that point, a return is made to the production of the insulated-gate field-effect transistor. Lastly, a finishing step common to both transistors and including common thermal annealing and common siliciding is performed.
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Chantre Alain
Marty Michel
Jenkens & Gilchrist PC
STMicroelectronics S.A.
Thompson Craig A.
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