Integrated circuit including a first gate stack and a second...

Details Integrated circuit including a first gate stack and a second... Integrated circuit including a first gate stack and a second...

2011-01-25

2011-01-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C257SE21689

Reexamination Certificate

active

07875516

ABSTRACT:
An integrated circuit including a first gate stack and a second gate stack and a method of manufacturing is disclosed. One embodiment provides non-volatile memory cells including a first gate stack and a gate dielectric on a first surface section of a main surface of a semiconductor substrate, and a second gate stack including a memory layer stack on a second surface section. A first pattern is transferred into the first gate stack and a second pattern into the second gate stack.

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