Integrated circuit having structural support for a flip-chip...

Details Integrated circuit having structural support for a flip-chip... Integrated circuit having structural support for a flip-chip...

2007-07-24

2007-07-24

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S771000, C257SE23142, C257SE21575, C257SE21627

Reexamination Certificate

active

11033009

ABSTRACT:
A technique for alleviating the problems of defects caused by stress applied to bond pads (32) includes, prior to actually making an integrated circuit (10), adding dummy metal lines (74, 76) to interconnect layers (18, 22, 26) to increase the metal density of the interconnect layers. These problems are more likely when the interlayer dielectrics (16, 20, 24) between the interconnect layers are of a low-k material. A critical area or force area (64) around and under each bond pad defines an area in which a defect may occur due to a contact made to that bond pad. Any interconnect layer in such a critical area that has a metal density below a certain percentage can be the cause of a defect in the interconnect layers. Any interconnect layer that has a metal density below that percentage in the critical area has dummy metal lines added to it.

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