Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-09-21
1999-10-12
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
438132, H01L 2900
Patent
active
059659270
ABSTRACT:
An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed insulation layers in a fuse opening while not interfering with the laser trimming of the fuse. An opening through the layers over a fuse is made forming vertical sidewalls which expose portions of the insulation layers. A protective layer is formed over the insulation layer, the sidewalls and fuse thus preventing contaminates from diffusing into the exposed insulation layers. A second opening is made in the protective layer over the fuse link to allow a laser beam to melt the underlying fuse link.
REFERENCES:
patent: 4536949 (1985-08-01), Takayama et al.
patent: 5025300 (1991-06-01), Billig et al.
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5329152 (1994-07-01), Janai et al.
Chin Hsien Wei
Lee Jin-Yuan
Yoo Chue-San
Ackerman Stephen B.
Martin-Wallace Valencia
Saile George O.
Stoffel William J.
Taiwan Semiconductor Manufacturing Company , Ltd.
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