Integrated circuit having a jet vapor deposition silicon nitride

Details Integrated circuit having a jet vapor deposition silicon nitride Integrated circuit having a jet vapor deposition silicon nitride

1996-08-05

1998-03-24

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438787, 438791, 438909, H01L 21336, H01L 2131

Patent

active

057312389

ABSTRACT:
An integrated circuit (10) is formed using jet vapor deposition (JVD) silicon nitride. A non-volatile memory device (11) has a tunnel dielectric layer (27) and an inter-poly dielectric layer (31) that can be formed from JVD silicon nitride. A transistor (12,13,40) is formed that has a gate dielectric material made from JVD silicon nitride. In addition, a passivation layer (47) can be formed overlying a semiconductor device (40) that is formed from JVD silicon nitride.

REFERENCES:
patent: 4688078 (1987-08-01), Hseih
patent: 4788082 (1988-11-01), Schmitt
patent: 5256205 (1993-10-01), Schmitt et al.
patent: 5356672 (1994-10-01), Schmitt et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5368897 (1994-11-01), Kurihara et al.
patent: 5403399 (1995-04-01), Kurihara et al.
L. Vishnubhotla et al., "Mobility & Reliability Improvements of Fluorinated Gate Oxide for VLSI Technology", International Symposium on VLSI Technology, Systems, and .ANG.pplications, Jun. 1995, Taiwan, pp 44-52.
X. Wang et al., "Highly Reliable Silicon Nitride Films Made by Jet Deposition", Japanese Journal of Applied Physics, Feb. 1995, vol. 34, No. 2b, pp. 955-958.
X. Wang et al., "Studies of Boron Penetration and Oxidation Resistance in Ultra-Thin JVD Silicon Nitride", APRDL, Oct. 1995, pp. 1-2.
X. Wang et al., "Extending Gate Dielectric Scaling Limit by Use of Nitride or Oxynitride", 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 109-110, month unknown.
D. Wang et al., "Highly-Quality MNS Capacitors Prepared by Jet Vapor Deposition at Room Temperature", IEEE Electron Device Letters, vol. 13, No. 9, Sep. 1992, pp. 482-484.

Affiliated with

Also associated with

Rating

Integrated circuit having a jet vapor deposition silicon nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit having a jet vapor deposition silicon nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit having a jet vapor deposition silicon nitride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2288578