Integrated circuit gate conductor having a gate dielectric which

Details Integrated circuit gate conductor having a gate dielectric which Integrated circuit gate conductor having a gate dielectric which

1996-12-23

1999-07-13

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438769, H01L 21336

Patent

active

059239832

ABSTRACT:
An integrated circuit is formed whereby transistor gate dielectrics are made less susceptible to hot carrier effects. Barrier atoms are inserted into critical areas to minimize trapping of hot carriers within the gate dielectric. Barrier atoms are incorporated into critical areas within the gate dielectric, primarily at the juncture between the gate dielectric and the overlying gate conductor and underlying substrate. The barrier atoms serve to eliminate bond opportunities of hot carriers injected from the drain area. The barrier atoms are presented by elevating the temperature of the integrated circuit being produced and the barrier-embodied gas surrounding the circuit. The elevated temperatures occur within either an RTA furnace or an oxidizing furnace. Significant is the incorporation of barrier atoms during a normal process flow, either during polysilicon oxidation and/or implant anneal. According to one embodiment, barrier atoms are incorporated after the LDD implant during times in which a polysilicon oxide is grown. According to a second embodiment, barrier atoms are incorporated after the source/drain implant and during anneal of those implant species. In yet another embodiment, barrier atoms are incorporated during each of the above steps.

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