Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-05-09
2006-05-09
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189030
Reexamination Certificate
active
07042773
ABSTRACT:
An integrated circuit includes a programming circuit (10) for generating programming signals (PS1, . . . , PS4) with a first input terminal (E1) for applying a control voltage (ES), a second input terminal (E2) for applying a reference voltage (Vref), a storage circuit (30) with programmable switches (35, . . . , 38) and output terminals (A1, . . . , A4). The programming circuit in each case generates a programming signal (PS1, . . . , PS4) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS1, . . . , PS4) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches (35, . . . , 38). The programming state of the programmable switches can be read out via the output terminals (A1, . . . , A4) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.
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Auge Jürgen
Pröll Manfred
Schneider Ralf
Schröder Stephan
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Nguyen Tuan T.
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