Integrated circuit field effect transistors including...

Details Integrated circuit field effect transistors including... Integrated circuit field effect transistors including...

2006-10-17

2006-10-17

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000, C257S328000, C257SE21438, C257SE21442

Reexamination Certificate

active

07122871

ABSTRACT:
Integrated circuit field effect transistors include an integrated circuit substrate and a fin that projects away from the integrated circuit substrate, extends along the integrated circuit substrate, and includes a top that is remote from the integrated circuit substrate. A channel region is provided in the fin that is doped a conductivity type and has a higher doping concentration of the conductivity type adjacent the top than remote from the top. A source region and a drain region are provided in the fin on opposite sides of the channel region, and an insulated gate electrode extends across the fin adjacent the channel region. Related fabrication methods also are described.

REFERENCES:
patent: 5428237 (1995-06-01), Yuzurihara et al.
patent: 5844278 (1998-12-01), Mizuno et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 2004/0126969 (2004-07-01), Brown et al.
patent: 2004/0217433 (2004-11-01), Yeo et al.

Affiliated with

Also associated with

Rating

Integrated circuit field effect transistors including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit field effect transistors including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit field effect transistors including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3651641