Integrated circuit field effect transisters including multilayer

Details Integrated circuit field effect transisters including multilayer Integrated circuit field effect transisters including multilayer

1997-05-09

2000-07-18

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257915, H01L 2910, H01L 2994

Patent

active

060911204

ABSTRACT:
An integrated circuit field effect transistor includes a multilayer gate electrode having a first conductive layer and a second conductive layer on the first conductive layer, wherein the second conductive layer is wider than the first conductive layer. The first conductive layer may be formed of titanium nitride and the second conductive layer may be formed of tungsten, copper and/or titanium silicide. The first conductive layer may be recessed relative to the second conductive layer by wet etching using a solution of hydrogen peroxide or hydrogen peroxide and sulfuric acid.

REFERENCES:
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patent: 5610430 (1997-03-01), Yamashita et al.
patent: 5668394 (1997-09-01), Lur et al.
patent: 5801427 (1998-09-01), Shiratake et al.
Hwang et al., "Novel Polysilicon/TiN Stacked-Gate Structure for Fully-depleted SOI/CMOS", IEDM Technical Disgest, Intenational Electrode Devices Meeting, San Francisco, CA, Dec. 13-16, 1992, pp. 345-348.

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