Integrated circuit fabrication

Details Integrated circuit fabrication Integrated circuit fabrication

1995-12-11

1998-10-13

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438918, H01L 21336

Patent

active

058211470

ABSTRACT:
Indium is employed as the shallow portion of a lightly doped drain transistor.

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